TaIrTe₄ is a layered ternary transition-metal telluride (Td phase) and a...

TaNiTe₅ is a layered tantalum–nickel telluride, the tellurium analogue o...

SnSe is a puckered layered semiconductor with a band gap of approximatel...

Sb₂Te₂Se is a tetradymite-type alloy of the Sb–Te–Se system, a chemical ...

InSe is a III–VI layered semiconductor with a direct band gap of approxi...

GeSb₄Te₇ is a germanium–antimony telluride in the (GeTe)ₘ(Sb₂Te₃)ₙ phase...

PbSe is a narrow-band-gap semiconductor. It is widely used in infrared o...

MoSSe is a sulfur–selenium alloy of molybdenum dichalcogenide with the n...

In₂GaBi₂S₆ is a quaternary layered sulfide. This compositionally complex...

InBi is a semimetallic compound of indium and bismuth. It provides a ref...

Bi₂O₂Te is a bismuth oxytelluride semiconductor, the tellurium analogue ...

SbTe is a layered antimony telluride in the Sb–Te phase system, structur...

Ni₂SiTe₄ is a ternary layered telluride with the nominal formula Ni₂SiTe...

Bi₂S₃ is a layered orthorhombic semiconductor (space group Pnma) built f...

Si₂CuP₃ is a ternary phosphide. Single crystals enable structural and el...

WS₂ is a layered transition metal dichalcogenide that crystallizes in th...

GePbS₃ is a ternary sulfide containing germanium and lead. Single crysta...

Co₂Bi₂Te₅ is a member of the MnBi₂Te₄ family of magnetic topological ins...

InSb is a III–V narrow-band-gap semiconductor. It is well known for its ...

Sb₂TeSe₂ is a tetradymite-type topological-insulator alloy in the Sb–Te–...

Nb₂SiTe₄ is a ternary layered telluride with the nominal formula Nb₂SiTe...

Ni₂Bi₂Te₅ is a member of the MnBi₂Te₄ family of magnetic topological ins...

Bi is an elemental bismuth single crystal with a rhombohedral A7 structu...

CdI₂ crystallizes in the 1T layered structure and is the prototype of th...

In₃SbTe₂ is a ternary telluride. Single crystals enable investigation of...

BiTe is a layered bismuth telluride belonging to the (Bi₂)ₘ(Bi₂Te₃)ₙ hom...

Sb₁₆Te₃ is a strongly antimony-rich phase in the Sb–Te phase diagram. It...

SnBi₄Te₇ is a (SnBi₂Te₄)(Bi₂Te₃)-type homologous compound and a layered ...

In₂P₃Se₉ is a layered metal selenophosphate, the selenium analogue of In...

NbTe₄ is a layered niobium telluride known for hosting charge-density-wa...

CuInS₂ is a chalcopyrite-structure semiconductor with a direct band gap ...

MoS₂ (Nb-doped) is niobium-doped molybdenum disulfide, a p-type doped va...

CrTe₂ is a layered transition-metal dichalcogenide that exhibits ferroma...

CrBi₂Te₄ is a member of the MnBi₂Te₄ family of intrinsic magnetic topolo...

MoSe₂ (Re-doped) is rhenium-doped molybdenum diselenide, an n-type doped...

NiI₃ is a layered magnetic halide with a van der Waals structure. It is ...

AgTaS₃ is a ternary silver–tantalum sulfide semiconductor. It is of inte...

PbSnS₂ is a ternary sulfide containing lead and tin. Single crystals are...

GaSe is a classic III–VI layered semiconductor with a direct band gap of...

BiSe is a layered bismuth selenide closely related to the Bi₂Se₃ topolog...

WTaSe₄ is a tungsten–tantalum selenide alloy with the nominal formula WT...

TaNi₂Te₃ is a ternary layered telluride with the nominal formula TaNi₂Te...

NiCoSe₂ is a nickel–cobalt diselenide alloy with the nominal formula NiC...

TaNi₂Te₂ is a ternary layered telluride with the nominal formula TaNi₂Te...

CoBi₄Se₇ is a (CoBi₂Se₄)(Bi₂Se₃)-type homologous compound belonging to t...

MoSe₂ (Fe-doped) is iron-doped molybdenum diselenide, a magnetically dop...

Cu₃SbS₃ is a ternary copper–antimony sulfide semiconductor (skinnerite) ...

InBiSe₃ is a ternary selenide semiconductor containing indium and bismut...