InSe (Indium Selenide)

InSe is a III–VI layered semiconductor with a direct band gap of approximately 1.3 eV. It is notable for its high electron mobility and strong optoelectronic response, and it exfoliates readily into few-layer crystals.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.