In₂GaBi₂S₆ (Indium Gallium Bismuth Sulfide)

In₂GaBi₂S₆ is a quaternary layered sulfide. This compositionally complex van der Waals material offers a platform for exploring structure–property relationships in multinary chalcogenides.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.