BiSe (Bismuth Selenide)

BiSe is a layered bismuth selenide closely related to the Bi₂Se₃ topological-insulator family, combining strong spin–orbit coupling with a narrow band gap. It is of interest for topological surface-state studies and thermoelectric applications.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — van der Waals layers cleave readily into atomically thin flakes.