Bi₂S₃ (Bismuth Sulfide)

Bi₂S₃ is a layered orthorhombic semiconductor (space group Pnma) built from ribbon-like Bi–S chains stacked into sheets, with a band gap of about 1.3 eV. It is widely studied for photodetectors, thin-film solar absorbers and thermoelectric devices.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Moderate — the layered structure cleaves into thin flakes and nanoribbons by mechanical exfoliation.