InSb (Indium Antimonide)

InSb is a III–V narrow-band-gap semiconductor. It is well known for its very high electron mobility and is widely used in infrared detectors and high-speed electronic devices.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Difficult — Bulk crystals are best used for structural and transport characterization.