InBiSe₃ is a ternary selenide semiconductor containing indium and bismut...

WS₂ is a layered transition metal dichalcogenide that crystallizes in th...

ZrS₃ is a quasi-one-dimensional zirconium trisulfide isostructural with ...

MoVSe₄ is a ternary layered selenide with the nominal formula MoVSe₄, co...

TaNiS₅ is a layered tantalum–nickel sulfide with a chain-like motif with...

HfS₃ is a quasi-one-dimensional hafnium trisulfide built from covalently...

PbSb₂Te₄ is a layered telluride. Its van der Waals structure belongs to ...

Ag₃Sb is a silver–antimony intermetallic compound (discrasite-type) with...

Sb₂S₃ is a layered orthorhombic semiconductor (Pnma), isostructural with...

NiCoSe₂ is a nickel–cobalt diselenide alloy with the nominal formula NiC...

TaNiTe₅ is a layered tantalum–nickel telluride, the tellurium analogue o...

MoS₂ is a layered transition metal dichalcogenide that crystallizes in t...

GaSe is a classic III–VI layered semiconductor with a direct band gap of...

GeS₂ is a layered wide-band-gap semiconductor. Its van der Waals structu...

SnSe is a puckered layered semiconductor with a band gap of approximatel...

MoS₂ (Nb-doped) is niobium-doped molybdenum disulfide, a p-type doped va...

Cu₃Se₂ is a copper-rich copper selenide semiconductor (umangite-type) wi...

Bi₂S₃ is a layered orthorhombic semiconductor (space group Pnma) built f...

In₂Se₃ is a layered semiconductor whose room-temperature α phase is ferr...

MoSe₂ (Nb-doped) is niobium-doped molybdenum diselenide, a p-type varian...

Bi₂O₂Te is a bismuth oxytelluride semiconductor, the tellurium analogue ...

MoWSe₄ is a molybdenum–tungsten selenide alloy with the nominal formula ...

CdI₂ crystallizes in the 1T layered structure and is the prototype of th...

MoSe₂ (Fe-doped) is iron-doped molybdenum diselenide, a magnetically dop...

AgTaS₃ is a ternary silver–tantalum sulfide semiconductor. It is of inte...

Zr₅Te₄ is a zirconium-rich telluride with a three-dimensional framework ...

CuIn₇Se₁₁ is a copper–indium ternary selenide related to the chalcopyrit...

Ta₂Ni₂Te₂ is a ternary layered telluride with the nominal formula Ta₂Ni₂...

Bi is an elemental bismuth single crystal with a rhombohedral A7 structu...

InBi is a semimetallic compound of indium and bismuth. It provides a ref...

SnPS₃ is a thiophosphate that exhibits ferroelectric behavior. Its layer...

Ag₂Te is a narrow-band-gap silver telluride semiconductor (hessite) know...

PbSnS₂ is a ternary sulfide containing lead and tin. Single crystals are...

Si₂CuP₃ is a ternary phosphide. Single crystals enable structural and el...

NbReS₄ is a ternary layered sulfide with the nominal formula NbReS₄, com...

WSe₂ (25% Mo-doped) is a molybdenum-alloyed tungsten diselenide with a n...

WTaSe₄ is a tungsten–tantalum selenide alloy with the nominal formula WT...

Bi₄Pb₇Se₁₃ is a complex layered bismuth–lead selenide with a modular sul...

MoWS₂ is a molybdenum–tungsten sulfide alloy with the nominal formula Mo...

CuBi₃PbS₆ is a quaternary copper–bismuth–lead sulfide with a complex mod...

SnPSe₃ is the selenide analogue of the layered thiophosphate family. Sin...

MoSe₂ (5% W-doped) is a tungsten-alloyed molybdenum diselenide with a no...

MoSe₂ (Ni-doped) is nickel-doped molybdenum diselenide, a transition-met...

HOPG is highly oriented pyrolytic graphite with near-perfect c-axis alig...

MoSSe is a sulfur–selenium alloy of molybdenum dichalcogenide with the n...

In₂GaBi₂S₆ is a quaternary layered sulfide. This compositionally complex...

V₂NiSe₄ is a ternary layered selenide with the nominal formula V₂NiSe₄, ...

GeS is a puckered layered semiconductor with a band gap of approximately...