Cr₂Ge₂Te₆ is a layered van der Waals ferromagnetic semiconductor with ou...

Cr₂Si₂Te₆ is a layered ferromagnetic semiconductor with a Curie temperat...

Cr₂S₃ is a layered van der Waals magnetic semiconductor from the chromiu...

CsV₃Sb₅ is a layered kagome metal (AV₃Sb₅ family, A = K/Rb/Cs) in which ...

A layered van der Waals metal phosphochalcogenide related to the CuInP₂S...

CuBi₃PbS₆ is a quaternary copper–bismuth–lead sulfide with a complex mod...

CuCrP₂S₆ is a layered transition-metal phosphochalcogenide (M₂P₂X₆ famil...

CuInP₂Se₆ is a layered multiferroic material, the selenium analogue of C...

CuInP₂S₆ is a layered multiferroic material exhibiting room-temperature ...

CuInS₂ is a chalcopyrite-structure semiconductor with a direct band gap ...

CuIn₇Se₁₁ is a copper–indium ternary selenide related to the chalcopyrit...

CuS is a hexagonal layered copper sulfide (covellite) with metallic-like...

A layered van der Waals metal phosphochalcogenide of the CuInP₂S₆-relate...

Cu₃SbS₃ is a ternary copper–antimony sulfide semiconductor (skinnerite) ...

Cu₃Se₂ is a copper-rich copper selenide semiconductor (umangite-type) wi...

Bilayer WSe₂ single crystals grown epitaxially by chemical vapor deposit...

Bilayer WSe₂ single crystals grown epitaxially by chemical vapor deposit...

Bilayer WS₂ single crystals grown epitaxially by chemical vapor depositi...

Large-area continuous bilayer WS₂ thin films grown by chemical vapor dep...

Large-area continuous monolayer MoS₂ thin films grown by chemical vapor ...

         Monolayer MoS₂ single crystals grown epitaxially by chemical va...

Monolayer WSe₂ single crystals grown epitaxially by chemical vapor depos...

Monolayer WS₂ single crystals grown epitaxially by chemical vapor deposi...

A heavy rare-earth member of the RTe₃ family, space group Cmcm. Owing to...

A layered RTi₃Bi₄ kagome magnet in which Ti kagome nets coexist with a E...

FeCl₂ is a layered antiferromagnetic insulator with a van der Waals crys...

A transition-metal phosphorus-chalcogenide layered van der Waals antifer...

FePS₃ is a layered transition-metal phosphochalcogenide (MPX₃ family) an...

FeSe is the structurally simplest iron-based superconductor, adopting a ...

A layered van der Waals itinerant ferromagnet isostructural with Fe₃GeTe...

Fe₃GeTe₂ is a layered van der Waals ferromagnetic metal (FeₙGeTe₂ family...

The Fe-deficient variant of the layered van der Waals ferromagnet Fe₃GeT...

A layered van der Waals itinerant ferromagnet of the Fe_nGeTe₂ family, s...

An Fe-rich member of the Fe_nGeTe₂ family with variable Fe occupancy, sp...

GaGeTe is a ternary layered telluride. Its van der Waals layered structu...

A layered ternary metal chalcogenide semiconductor adopting a hexagonal ...

GaPS₄ is a layered thiophosphate. Its phosphorus–sulfur polyanionic fram...

GaSe is a classic III–VI layered semiconductor with a direct band gap of...

GaTe is a III–VI layered semiconductor with a direct band gap of approxi...

GdTe₃ is structurally analogous to LaTe₃ (orthorhombic, space group Cmcm...

GeBi₂Te₄ is a layered ternary topological insulator crystallizing in the...

GeBi₄Te₇ is a (GeBi₂Te₄)(Bi₂Te₃)-type homologous compound and a layered ...

A group IV–V layered van der Waals semiconductor with a low-symmetry mon...

GePbS₃ is a ternary sulfide containing germanium and lead. Single crysta...

GeS is a puckered layered semiconductor with a band gap of approximately...

GeSb₄Te₇ is a germanium–antimony telluride in the (GeTe)ₘ(Sb₂Te₃)ₙ phase...

A layered van der Waals group-IV monochalcogenide with an orthorhombic, ...

GeS₂ is a layered wide-band-gap semiconductor. Its van der Waals structu...