GaTe (Gallium Telluride)

GaTe is a III–VI layered semiconductor with a direct band gap of approximately 1.7 eV. Its puckered monoclinic layer structure gives rise to strong in-plane anisotropy, attracting interest for polarization-sensitive optoelectronics.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.