GaInS₃ (Gallium Indium Trisulfide, hexagonal phase)

A layered ternary metal chalcogenide semiconductor adopting a hexagonal structure. It is a wide-bandgap semiconductor with pronounced anisotropic optical properties and, owing to its non-centrosymmetric hexagonal lattice, a notable second-harmonic and nonlinear optical response. Its combination of wide bandgap, layered morphology, and nonlinear optical activity makes hexagonal GaInS₃ a candidate for ultraviolet–visible optoelectronics, nonlinear photonics, and two-dimensional light-emitting devices.

Growth method: Flux growth.

Sample specifications: Individual crystals measure approximately 3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Moderate — exfoliable by mechanical exfoliation, but isolating thin flakes may require repeated cleaving or optimized methods.