GeS₂ (Germanium Disulfide)

GeS₂ is a layered wide-band-gap semiconductor. Its van der Waals structure allows clean mechanical exfoliation, and it is of interest as a wide-gap optoelectronic and dielectric material.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.