CVD-Grown Bilayer WS₂ Thin Films

Large-area continuous bilayer WS₂ thin films grown by chemical vapor deposition (CVD) are formed by the lateral coalescence of numerous bilayer domains, enabling wafer-scale, high-coverage continuous films. Bilayer WS₂ is an indirect-bandgap 2H-phase semiconductor whose interlayer coupling gives rise to distinctive optical and electronic properties—including tunable band structure, spin–valley physics, and pronounced second-harmonic and interlayer-exciton behavior—that are absent in the monolayer. The continuous film offers large area and uniform coverage, facilitating large-scale device-array fabrication and subsequent transfer, making it an ideal material platform for the batch integration of wafer-scale field-effect transistors, photodetector arrays, and van der Waals heterostructures.

　　Sample specifications: Films are grown on SiO₂/Si substrates with a standard substrate size of 1.5 cm. As the only supplier currently capable of scalable bilayer film growth, we can also provide larger sizes upon request—please contact us for customization.