CVD-Grown Triangular Monolayer WSe₂ Single Crystals

Monolayer WSe₂ single crystals grown epitaxially by chemical vapor deposition (CVD) typically exhibit a well-defined equilateral triangular morphology, resulting from the anisotropy in surface energy and edge growth kinetics, with edges predominantly along W- or Se-terminated zigzag orientations. As a 2H-phase direct-bandgap semiconductor (bandgap ~1.65 eV), monolayer WSe₂ features strong photoluminescence, pronounced valley–spin coupling arising from strong spin–orbit interaction, and excellent p-type field-effect performance. Being single-domain and free of grain boundaries, it serves as an ideal single-crystal platform for high-performance field-effect transistors, photodetectors, and van der Waals heterostructures.

　　Sample specifications: Individual triangular crystals measure 50–100 μm; substrates are available in either sapphire or SiO₂/Si, with a substrate size of 1.5 cm. Larger samples can be customized upon request, with a lead time of at least 2 weeks.