WS₂ (Tungsten Disulfide)

WS₂ is a layered transition metal dichalcogenide that crystallizes in the 2H phase under ambient conditions. It is an indirect-band-gap semiconductor with a bulk band gap of about 1.35 eV, and its strong spin–orbit coupling makes it a key material for valleytronic and optoelectronic studies.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.