SiAs (Silicon Arsenide)

A layered van der Waals group IV–V semiconductor, space group C2/m, built from puckered Si–As layers with strong in-plane structural anisotropy. It is a wide-bandgap semiconductor (~1.6–1.9 eV) exhibiting pronounced anisotropic optical, electrical, and vibrational (Raman) responses arising from its low-symmetry layered structure. These properties, together with a strong and polarization-sensitive photoresponse, make SiAs a candidate for anisotropic optoelectronics, polarization-sensitive photodetectors, and two-dimensional electronic devices.

Sample specifications: Individual crystals measure approximately 1~2 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Moderate — exfoliable by mechanical exfoliation, but isolating thin flakes may require repeated cleaving or optimized methods.

Growth method: Chemical vapor transport (CVT).