GeBi₂Te₄ (Germanium Bismuth Telluride)

GeBi₂Te₄ is a layered ternary topological insulator crystallizing in the Bi₂Te₃-type structure. It is also known as a phase-change material, bridging topological physics and memory applications.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Moderate — cleaves along the van der Waals planes into thin flakes.