CVD-Grown Bilayer Triangular WSe₂ Single Crystals

Bilayer WSe₂ single crystals grown epitaxially by chemical vapor deposition (CVD) exhibit a well-defined equilateral triangular morphology, with the second layer stacked on the first in a controlled registry. Bilayer WSe₂ is an indirect-bandgap 2H-phase semiconductor whose interlayer coupling gives rise to distinctive optical and electronic properties—including tunable band structure, spin–valley physics, and pronounced second-harmonic and interlayer-exciton behavior—that are absent in the monolayer. Being single-domain and free of grain boundaries, it serves as an ideal platform for field-effect transistors, photodetectors, and van der Waals heterostructures.

Growth method: Chemical vapor deposition (CVD).

　　Sample specifications: Individual triangular crystals measure around 50 μm; substrates are available in either sapphire or SiO₂/Si, with a substrate size of 1.5 cm. As the only supplier currently capable of scalable bilayer growth, we can also provide larger sizes upon request—please contact us for customization.