AgInP₂Se₆ (Silver Indium Phosphorus Triselenide)

A layered van der Waals metal phosphochalcogenide of the CuInP₂S₆-related family, in which Ag⁺ and In³⁺ cations occupy the octahedral sites of the P₂Se₆ framework. It is a candidate two-dimensional ferroelectric / antiferroelectric semiconductor, where off-centering of the Ag⁺ ions produces switchable electric polarization; selenization gives it a narrower bandgap and higher polarizability than its sulfur analogue. These properties make AgInP₂Se₆ a candidate for two-dimensional ferroelectrics, non-volatile memory, and infrared optoelectronic devices.

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.

Growth method: Chemical vapor transport (CVT).