2H-MoTe₂ (Hexagonal Phase)

2H-MoTe₂ is a hexagonal-phase layered transition-metal dichalcogenide and a semiconductor, with a direct band gap (~1.1 eV) in the monolayer and an indirect gap in the bulk. Its relatively narrow gap—close to that of silicon—together with strong spin–orbit coupling and valley-spin properties, makes it well suited for field-effect transistors, photodetection extending into the near-infrared, and valleytronics.

Sample specifications: Individual crystals measure approximately 2~3 mm, with a purity of up to 99.9999% (6N), and at least 3 pieces included in each package.

Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.

Growth method: Chemical vapor transport (CVT).