ZrS₂ (Zirconium Disulfide)

ZrS₂ is a 1T-phase layered transition-metal dichalcogenide and an indirect-bandgap semiconductor (band gap ≈ 1.7 eV), featuring relatively high theoretical mobility and good visible-light absorption, which makes it a candidate channel material for field-effect transistors, photodetection, and thermoelectric applications. Its layered structure is readily exfoliated.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.