Monolayer Lateral Heterostructure Single Crystals

Monolayer lateral heterostructures are grown epitaxially by chemical vapor deposition (CVD), with two monolayer transition-metal dichalcogenides seamlessly stitched within a single atomic plane to form a covalently bonded one-dimensional heterointerface. They can be formed from any combination of the four monolayer materials MoS₂, WS₂, WSe₂, and MoSe₂, whose differing band gaps produce a type-II band alignment at the junction that promotes electron–hole separation, making them an ideal single-crystal platform for studying in-plane p–n junctions, interfacial excitons, and on-chip optoelectronic devices. The crystals exhibit a regular triangular morphology with a single domain, a well-defined interface, and a clean surface.

Growth method: Chemical vapor deposition (CVD).

　　Sample specifications: Grown on a SiO₂/Si substrate (2 cm in size), with hundreds of crystals per substrate; the lateral heterostructures can be formed from any combination of the four materials MoS₂, WS₂, WSe₂, and MoSe₂. Lead time is approximately 2–3 weeks.