GeS (Germanium Sulfide)

GeS is a puckered layered semiconductor with a band gap of approximately 1.6 eV. Its orthorhombic lattice is strongly anisotropic, producing highly direction-dependent electronic and optical properties.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.