GaSe (Gallium Selenide)

GaSe is a classic III–VI layered semiconductor with a direct band gap of approximately 2.0 eV. It is widely valued in nonlinear optics, and its weakly bonded layers make it one of the easiest materials to exfoliate into atomically thin flakes.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.