CVD-Grown Triangular Monolayer MoS₂ Single Crystals

         Monolayer MoS₂ single crystals grown epitaxially by chemical vapor deposition (CVD) typically exhibit a well-defined equilateral triangular morphology, resulting from the anisotropy in surface energy and edge growth kinetics, with edges predominantly along Mo- or S-terminated zigzag orientations. As a 2H-phase direct-bandgap semiconductor (bandgap ~1.8 eV), monolayer MoS₂ features strong photoluminescence, pronounced valley–spin coupling, and excellent field-effect performance. Being single-domain and free of grain boundaries, it serves as an ideal single-crystal platform for high-performance field-effect transistors, photodetectors, and van der Waals heterostructures.

　　Sample specifications: Individual triangular crystals measure 50–100 μm; substrates are available in either sapphire or SiO₂/Si, with a substrate size of 1.5 cm. Larger samples can be customized upon request, with a lead time of at least 2 weeks.