CVD-Grown Monolayer MoS₂ Thin Films

Large-area continuous monolayer MoS₂ thin films grown by chemical vapor deposition (CVD) are formed by the lateral coalescence of numerous monolayer domains, enabling wafer-scale, high-coverage continuous films. As a 2H-phase direct-bandgap semiconductor (bandgap ~1.8 eV), the film exhibits strong photoluminescence, pronounced valley–spin coupling, and excellent field-effect performance. Compared with isolated triangular single crystals, the continuous film offers large area and uniform coverage, facilitating large-scale device-array fabrication and subsequent transfer, making it an ideal material platform for the batch integration of wafer-scale field-effect transistors, photodetector arrays, and van der Waals heterostructures.

Growth method: Chemical vapor deposition (CVD).

　　Sample specifications: The standard substrate size is 1.5 cm, available in either sapphire or SiO₂/Si; for larger sizes, films can be grown only on sapphire, up to 12 inches. Please contact us for related requirements.