CuInP₂S₆ (Copper Indium Thiophosphate)

CuInP₂S₆ is a layered multiferroic material exhibiting room-temperature ferroelectricity. Its coupled ferroelectric and ionic-conduction behavior makes it a promising candidate for non-volatile memory and neuromorphic devices.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Moderate — cleaves along the van der Waals planes into thin flakes.