ZrSe₂ (1T phase) (Zirconium Diselenide)

A layered van der Waals transition-metal dichalcogenide with octahedral coordination, space group P3̄m1. It is an indirect-bandgap semiconductor (~1.2 eV) with high theoretical carrier mobility and a favorable thermoelectric response. Its moderate bandgap and layered structure make 1T-ZrSe₂ a candidate for field-effect transistors, thermoelectrics, and two-dimensional optoelectronic devices.

Sample specifications: Individual crystals measure approximately 2–3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.

Growth method: Chemical vapor transport (CVT).