WS₂/WSe₂ Multi-junction Lateral Heterostructure Single Crystals

The WS₂/WSe₂ multi-junction lateral heterostructure is grown epitaxially by chemical vapor deposition (CVD). Within a single crystal, WS₂ and WSe₂ are grown alternately and periodically along the triangular edges, forming multiple covalently bonded interfaces arranged as concentric nested triangles (a multi-junction structure). Adjacent regions have different band gaps (WS₂ ~2.0 eV, WSe₂ ~1.65 eV), producing a type-II band alignment at each interface and a periodic array of in-plane p–n junctions—an ideal single-crystal platform for studying multi-junction optoelectronic devices, periodic potential engineering, interfacial excitons, and superlattice effects. The crystals exhibit a regular triangular morphology with a single domain, well-defined interfaces, and a clean surface.

　　Sample specifications: Grown on a SiO₂/Si substrate (2 cm in size), with hundreds of crystals per substrate. Lead time is approximately 2–3 weeks.