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SnSe₂ (Tin Diselenide)
¥4,219.00
A layered van der Waals metal dichalcogenide with the 1T structure, space group P3̄m1. It is an indirect-bandgap semiconductor (~1.0–1.2 eV) with high carrier mobility, and can be driven toward metallic or even superconducting behavior via intercalation. Its combination of a moderate bandgap and layered structure makes SnSe₂ attractive for high-speed photodetectors, thermoelectrics, and two-dimensional electronic devices.
Growth method: Chemical vapor transport (CVT).
Sample specifications: Individual crystals measure approximately 5 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.
Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.