MoSe₂ (Molybdenum Diselenide)

MoSe₂ is a hexagonal (2H) layered transition-metal dichalcogenide and a semiconductor, with a direct band gap (~1.5 eV) in the monolayer and an indirect gap in the bulk. It features strong photoluminescence, pronounced valley–spin coupling, and excellent field-effect performance, with near-infrared emission that facilitates integration with silicon photonics, making it a core material for field-effect transistors, photodetection, light-emitting devices, and valleytronics.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.