MnTe (Manganese Telluride)

MnTe is a layered van der Waals antiferromagnetic semiconductor that crystallizes in the hexagonal NiAs-type structure. It orders antiferromagnetically with a Néel temperature near room temperature (about 307 K) and is a direct-band-gap semiconductor, making it a key material for research on two-dimensional antiferromagnetism, altermagnetism, and antiferromagnetic spintronics.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Difficult — layered structure cleavable by mechanical exfoliation with care.