InSiTe₃ (Indium Silicon Telluride)

InSiTe₃ is a ternary layered telluride. Its van der Waals structure makes it suitable for mechanical exfoliation and studies of layered telluride electronics.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Easy — readily exfoliated by mechanical cleavage into few-layer flakes.