InGaS₃ (Indium Gallium Sulfide)

InGaS₃ is a ternary sulfide semiconductor. It is highly hygroscopic and should be handled and stored under dry conditions at all times.

Growth method: Chemical vapor transport (CVT).

Sample specifications: Individual crystals measure approximately 3–4 mm, with a purity of up to 99.999% (5N), and 2–3 high-quality single-crystal pieces included in each package.

Exfoliation: Difficult — highly hygroscopic; handle and store under dry conditions.