GeTe (Germanium Telluride)

A narrow-bandgap IV–VI compound that, in its rhombohedral α-phase (space group R3m), is a prototypical ferroelectric Rashba semiconductor. Its non-centrosymmetric polar structure combines with strong spin-orbit coupling to produce a giant, electrically switchable bulk Rashba spin splitting, linking ferroelectric polarization to spin texture. GeTe is also a classic phase-change material (used in memory) and a thermoelectric, making it a versatile platform for studying ferroelectric spintronics, phase-change memory, and spin-texture control.

Growth method: Bridgman growth.

Sample specifications: Individual crystals measure approximately 2~3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Difficult — strong interlayer bonding; mechanical exfoliation typically yields thick flakes, and ultrathin flakes are challenging to isolate.