Bi₂O₂Se (Bismuth Oxyselenide)

Bi₂O₂Se is a layered bismuth-oxyselenide semiconductor built from alternating [Bi₂O₂] and Se layers held together by weak electrostatic coupling. It features high carrier mobility (far exceeding most TMDs), a moderate band gap (~0.8 eV), and excellent air stability, and can be natively oxidized into a high-quality gate dielectric (Bi₂SeO₅). These properties make Bi₂O₂Se a strong candidate to replace silicon channels and a leading material for high-performance field-effect transistors, infrared photodetection, and integrated electronics.

Growth method: Flux growth.

Sample specifications: Individual crystals measure approximately 3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package.

Exfoliation: Moderate — exfoliable by mechanical exfoliation, but isolating thin flakes may require repeated cleaving or optimized methods.