{"product_id":"hafnium-diselenide-1t-hfse","title":"Hafnium Diselenide (1T-HfSe₂)","description":"\u003cp\u003e\u003cmeta charset=\"UTF-8\"\u003e\u003cspan\u003eHfSe₂ is a Group-IV transition metal diselenide whose stable phase is the \u003c\/span\u003e\u003cstrong\u003e1T phase (octahedral, CdI₂-type)\u003c\/strong\u003e\u003cspan\u003e, adopting a \u003c\/span\u003e\u003cstrong\u003etrigonal structure\u003c\/strong\u003e\u003cspan\u003e with space group P-3m1. Unlike 2H-phase TMDs such as MoS₂, 1T-HfSe₂ is an \u003c\/span\u003e\u003cstrong\u003eindirect-bandgap semiconductor\u003c\/strong\u003e\u003cspan\u003e with a bandgap of about \u003c\/span\u003e\u003cstrong\u003e1.1–1.2 eV\u003c\/strong\u003e\u003cspan\u003e, close to that of silicon, and its conduction- and valence-band edge positions make it suitable as a channel material for \u003c\/span\u003e\u003cstrong\u003eCMOS-compatible field-effect transistors (FETs)\u003c\/strong\u003e\u003cspan\u003e. It offers relatively high carrier mobility, and its native oxide (HfO₂) can serve as a gate dielectric, making it attractive for \u003c\/span\u003e\u003cstrong\u003elow-power two-dimensional electronic devices\u003c\/strong\u003e\u003cspan\u003e. Its drawback is sensitivity to air and susceptibility to oxidation, requiring encapsulation for protection.\u003c\/span\u003e\u003c\/p\u003e","brand":"2D Material Supermarket","offers":[{"title":"Default Title","offer_id":53862500139192,"sku":null,"price":4077.0,"currency_code":"CNY","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0649\/0069\/4200\/files\/9812ae11188f1b4ad8eed2e0acbb1803.png?v=1786009090","url":"https:\/\/2dmaterialsupermarket.com\/products\/hafnium-diselenide-1t-hfse","provider":"2D Material Supermarket","version":"1.0","type":"link"}